Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Politifact

Social media post misleads about Bill Gates’ remark about injecting kids

Social media post misleads about Bill Gates’ remark about injecting kids If Your Time is short A COVID-19-related TikTok post used a Bill Gates quote on injecting kids with genetically modified ...
Semiconductor Engineering

Gate Drive Configurations For GaN Power Transistors

This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...
EDN

Drain-Current Characteristics of Enhancement-Mode GaN HEMTs

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...