The SNS records neural activity from 60 channels across four brain regions—an order-of-magnitude increase over commercially ...

Four memory modes, one device The study reveals that by tuning experimental parameters such as electrolyte composition, pH, voltage frequency, and channel geometry, the same nanofluidic device can ...

A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern ...

These loop styles correspond to different memory mechanisms, including ion-ion interaction, ion-surface charge adsorption/desorption, surface charge inversion, and ion concentration polarization.