Side-wall MoS 2 transistors with an atomically thin channel and a physical gate length of sub-1 nm using the edge of a graphene layer as the gate electrode Find the technical paper link here.
More Moore technology, which is to develop “cheaper, smaller, and better-performing” semiconductors with materials other than silicon (Si), is expected to gain momentum, thanks to a recent study from ...
Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...
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