Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage. Amorphous oxides are especially attractive for stacked devices because ...
Experts at the Table — Part 2: Semiconductor Engineering sat down to talk about AI and the latest issues in SRAM with Tony Chan Carusone, chief technology officer at Alphawave Semi; Steve Roddy, chief ...
Ever improving non-volatile static random access memories (nvSRAMs) are here to address the shortcomings of battery-backed SRAMs. Providing a significant power management advantage, these parts ...
QDR Level Performance - Replaces up to 8X QDRs - Capacities of 576Mb or 1Gb in Single Device Costing Less Than $200 in Volume Quantities SAN JOSE, CA / ACCESSWIRE / July 15, 2020 / MoSys, Inc. (NASDAQ ...
Startup launches “Corsair” AI platform with Digital In-Memory Computing, using on-chip SRAM memory that can produce 30,000 tokens/second at 2 ms/token latency for Llama3 70B in a single rack. Using ...
MoSys Inc. today is unveiling an intellectual property core that it claims willquadruple the memory density possible using conventional embedded SRAMtechnology without breaking the chip's space or ...
Traditional memory solutions are now being replaced by architectures like NOR+SRAM+NAND and NAND+LPSDRAM. As cellular phones incorporate the multi-function capabilities that enable web-access and ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback