Abstract: We demonstrate a normally-off n-GaN/p-GaN/Al-GaN/GaN HEMT featuring a semiconducting gate (SG), i.e., an n-GaN layer overlaying the 2DEG channel as an ...
Abstract: The key requirement for underwater image enhancement (UIE) is to overcome the unpredictable color degradation caused by the underwater environment and light attenuation, while addressing ...
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