News

Photonics company Coherent has launched the SES18-880A-190-10, a high-power 880 nm single-emitter laser diode on sub mount, ...
Key features of the QPA1722 include a frequency range of 17.7–20.2 GHz, 10W saturated output power (6W linear), 1 GHz ...
Compound semiconductor wafer company IQE plc and Quinas Technology, a British semiconductor company, have completed a £1.1 ...
Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...
Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High Voltage Direct Current (HVDC) architecture, designed for megawatt-scale AI ...
Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...
Compound Semiconductor™ is an Angel Business Communications publication.
Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...
The Ferdinand-Braun-Institut (FBH) will be presenting its range of photonics expertise and solutions at Laser World of ...
Mitsubishi Electric has developed a compact 7GHz band GaN power amplifier module (PAM) for 5G-Advanced base station with what ...
Now researchers at Imec and Ghent University have demonstrated a fully-integrated single-chip microwave photonics system, combining optical and microwave signal processing on a single silicon chip.